Subminiature transmissive optical sensor with transistor. U2146 pcb 50601 stk401 7t00 mg250 stk400010 stk401010 stk401100 text. An important notice at the end of this data sheet addresses availability, warranty, changes, use in safetycritical applications, intellectual property matters and other important disclaimers. C sockets with retention feature solder tails courtesy of steven engineering, inc. Sensitive gate silicon controlled rectifiers reverse blocking thyristors annular pnpn devices designed for high volume consumer. Aod472 nchannel enhancement mode field effect transistor.
Irg4bc20ud insulated gate bipolar transistor with ultrafast soft recovery diode features e g c vces 600v. Order this document motorola by 2n5655d semiconductor technical data 2n5655 2n5656 plastic npn silicon 2n5657 highvoltage power transistor. Ja thermal resistance, junctiontoambient note 1 350 c w package marking and ordering information. Toshiba transistor silicon pnp epitaxial type pct process 2sc1959 audio frequency low power amplifier applications driver stage amplifier applications switching applications excellent hfe linearity. Lm5060 snvs628h october 2009revised december 2019 lm5060 highside protection controller with low quiescent current 1 1 features. If its not shown correctly, click here to open the file on a separate window. The ut100n03 uses advanced trench technology to provide excellent rdson, low gate charge and operation with. Ja gatesource voltage 20 drainsource voltage 60 aotf409 pchannel enhancement mode field effect transistor. Protection controller with low quiescent current data sheet snvs628. Nov 07, 2018 c6090 datasheet pdf npn transistor sanyo, c6090 datasheet, c6090 pdf, c6090 pinout, data, circuit, manual, substitute, parts, schematic, equivalent. Annular pnpn devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection. This transistor is a low voltage high current small signal npn transistor, designed for class b pushpull audio amplifier and general purpose applications.
Apower transistor 9010v, 3a2sc5060features1 builtin zener diode between collector and base. Lm5060 highside protection controller with low quiescent. Silicon npn power transistors 2sc3320 description with to3pn package high voltage,high speed switching high reliability applications switching regulators ultrasonic generators high frequency inverters general purpose power amplifiers pinning pin description 1base 2 collector. To92 to226, pins3 2n5060 series sensitive gate silicon controlled rectifiers. Surge stopping and reverse voltage protection with the lm5069 pdf, 393 kb. The useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier.
Nds0605 pchannel enhancement mode field effect transistor. C b e to92 c b e b c c sot223 e npn general purpose amplifier this device is designed as a general purpose amplifier and switch. Typical parameters which may be provided in scillc data sheets andor specifications can and do. This new generation mosfet has been designed to minimize the on state resistance. Philips semiconductorsproduct specificationnchannel enhancement modeirlz34nlogic level trenchmostm transistorfig. Characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation tc25. Toshiba transistor silicon pnp epitaxial type pct process.
C380 datasheet, c380 pdf, c380 data sheet, datasheet, data sheet, pdf. I absolute maximum rating ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 30 v collectoremitter voltage vceo 20 v emitterbase voltage vebo 5 v collector current ic 700 ma sot23 350 mw. Dmc1029ufdb transistor datasheet, dmc1029ufdb equivalent, pdf data sheets. Mos transistor nchannel, enhancement mode mosfet transistor features. Transistors 2sc0829 2sc829 silicon npn epitaxial planar type for highfrequency amplification 5. This new generation 30v pchannel enhancement mode mosfet is designed to. The mic5060 mosfet driver is designed for gate control of nchannel, enhancementmode, and power mosfets. C32725 datasheet 45v, 500ma, to92, pnp transistor nxp.
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B2, december 2002 bc635637639 npn epitaxial silicon transistor absolute maximum ratings ta25 c unless otherwise noted pw5ms, duty cycle10%. Silicon npn epitaxial type pct process, audio frequency general purpose amplifier applications, driver stage amplifier applications. Low voltage high current small signal pnp transistor description the utc 8550s is a low voltage high current small signal pnp transistor, designed for class b pushpull audio amplifier and general purpose applications. Vdrm and v rrm f or a ll t ypes c an b e a pplied o n a c ontinuous b asis. Aotf409 pchannel enhancement mode field effect transistor.
Ss8050 npn epitaxial silicon transistor absolute maximum ratings ta25 c unless otherwise noted electrical characteristics ta25 c unless otherwise noted hfe classification symbol parameter ratings units vcbo collectorbase voltage 40 v vceo collectoremitter voltage 25 v vebo emitterbase voltage 6 v ic collector current 1. C5060 datasheet, c5060 pdf, c5060 data sheet, c5060 manual, c5060 pdf, c5060, datenblatt, electronics c5060, alldatasheet, free, datasheet, datasheets, data sheet. Intersil semiconductor products are sold by description only. C6090 datasheet pdf npn transistor sanyo, c6090 datasheet, c6090 pdf, c6090 pinout, data, circuit, manual, substitute, parts, schematic, equivalent. Ta 25 c derating factor ta 70 c power rating above ta 25 c power rating d 725 mw 5.
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